In a nutshell, we propose multi scale modeling technique for all-2D MISFET, which starts from the atomic granularity of the material and ends up in SPICE. We demonstrate how an atomic level phenomenon (e.g. band-gap opening in graphene) could be translated into a circuit performance metric (e.g. frequency of a ring oscillator). Such first-principles-based models enable systematic performance evaluation of emerging materials at device and circuit level at early phase of advanced technology node development. These models could be useful to reduce the cost and time for process-integration of new materials through material-device-circuit co-optimization


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